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 NTE907 Integrated Circuit Diode Array
Description: The NTE907 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Five of the diodes are independently accessible, with the sixth sharing a common terminal with the substrate. The NTE907 comes in a 12-Lead TO5 type package. Features: D Excellent Reverse Recovery Time: 1ns typ. D Matched Monolithic Construction: VF matched within 5mV D Low Diode Capacitance: CD = 0.65pF typical at VR = -2V Applications: D Balanced Modulators or Demodulators D Ring Modulators D High Speed Diode Gates D Analog Switches Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation, PD Any one diode unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Total for device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW For TA > 55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate linearly 5.7mW/C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Peak Inverse Voltage, PIV D1 - D5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V D6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5V Peak Diode-to-Substrate Voltage, VDI for D1-D5 (Pin1, 4, 5, 8, or 12 to Pin10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V, -1V DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Peak Recurrent Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak Forward Surge Current, IF (Surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Lead Temperature, TL (During soldering 1/16 1/32" (1.59 0.79mm) from case for 10sec Max) . . . . . . . . . +265C
Electrical Characteristics: (TA = +25C, Note 1 unless otherwise specified)
Parameter DC Forward Voltage Drop Symbol VF Test Conditions IF = 50A IF =1 mA IF = 3mA IF = 10mA DC Reverse Breakdown Voltage DC Reverse Breakdown Voltage Between any Diode Unit and Substrate DC Reverse (Leakage) Current V(BR)R V(BR)R IR = -10A IR = -10A Min - - - - 5 20 Typ 0.65 0.73 0.76 0.81 7 - Max 0.69 0.78 0.80 0.90 - - V V Unit V
IR
VR = -4V VR = -10V
- -
0.016 0.022
100 100
nA nA
DC Reverse (Leakage) Current IR Between any Diode Unit and Substrate Magnitude of Diode Offset Voltage |VF1-VF2| (Difference in DC Forward Voltage Drops of any Two Diode Units) Temperature Coefficient of |VF1-VF2| |VF1-VF2| T Temperature Coefficient of Forward VF T Drop DC Forward Voltage Drop for VF Anode-to-Substrate Diode (DS) Reverse Recovery Time trr Diode Resistance Diode Capacitance Diode-to-Substrate Capacitance RD CD CD1
IF = 1mA
-
0.5
5
mV V/C mV/C V ns pF pF
IF = 1mA IF = 1mA IF = 1mA IF = 10mA, IR = 10mA f = 1kHz, IF = 1mA VR = -2V, IF = 0 VD1 = +4V, IF = 0
- - - - 25 - -
1 -1.9 0.65 1 30 0.65 3.2
- - - - 45 - -
Note 1. Characteristics apply for each diode unit, unless otherwise specified.
Pin Connection Diagram (Top View)
Anode D1 8 Anode D6 9 Cathode D6/ Substrate & Case 10 Cathode D5 11 Anode D5 12
1 2
67
Cathode D1 6 Cathode D2 5 Anode D2 4 Anode D3
Anode D4 1
3 Cathode D3
Cathode D4
.370 (9.4) Dia Max .335 (8.5) Dia Max
.180 (4.57) Max
.500 (12.7) Min
.018 (0.48) Dia Typ .245 (6.23) Dia 4 3 2 1
5 6 7
12 11 10 9
8


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